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 Surface Mount Switching Diode
Features
Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertio For General Purpose Switching Applications High Conductance
COMCHIP
www.comchip.com.tw
Voltage: BAV99W Thru BAW56W Current: 70 Volts 215mA
SOT-323
.087 (2.2) .070 (1.8)
.016 (.40)
Mechanical data
Case: SOT - 323, Plastic Approx. Weight: 0.008 gram This diodes is also available in other configurations including a dual common cathode with type designation BAV70W,a dual common anodes with type designation BAW56 and single chip inside with type Designation BAL99W
Top View
.054 (1.35) .045 (1.15)
3
1
2
.004 (0.1) max.
CATHODE
1
3
3
ANODE
2
CATHODE
ANODE
ANODE
2
CATHODE
CATHODE
ANODE
CATHODE
1
ANODE
1
2
CATHODE
.016 (.40)
.016 (.40) max.
.087 (2.2) .078(2. 0)
3
CATHODE
3
2
ANODE
Dimensions in inches (millimeters)
BAV70W
Maximum Ratings
Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current
BAW56W
Symbol VR IF IFM(surge)
Value 70 215 500
Units VDC mAdc mAdc
Thermal Characteristics
Characteristic Total Device Dissipation FR- 5 Board(1) T A = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) T A = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R
JA
Max 225 1.8 556 300 2.4 417 -55 to +150
Units mW mW/C C/W mW mW/C C/W C
PD R
JA
TJ, Tstg
Electrical Characterics (TA = 25C unless otherwise noted)
Characteristic (OFF CHARACTERISTICS) Reverse Breakdown Voltage ( I(BR) = 100 uAdc ) Reverse Voltage Leakage Current VR = 25 Vdc, TJ = 150C V R = 70 Vdc V R = 70 Vdc, TJ = 150C Diode Capacitance (VR = 0, f = 1.0 MHz)) Forward Voltage I F = 1.0 mAdc I F = 10 mAdc I F = 50 mAdc I F = 150 mAdc Reverse Recovery Time (IF = IR = 10 mAdc, I R(REC) = 1.0mAdc) RL = 100 1.FR-5 = 1.0 X 0.75X 0.062 in.
MDS0302003A
Symbol V(BR) IR CD
Min 70 -
Max 30 2.5 50 1.5 715 855 1000 1250 6.0
.044 (1.10) .035 (0.90)
1
.006 (0.15) .002 (0.05)
BAV99W
ANODE
BAL99W
.056(1.4) .047(1.2)
Units Vdc uAdc pF
VF
-
mV
Trr
nS
2.Aluminum = 0.4X 0.3X 0.024 in. 99.5% aluminum.
Page 1
Surface Mount Switching Diode
COMCHIP
www.comchip.com.tw
RATING AND CHARACTERISTIC CURVES (BAV99W Thru BAW56W)
820 +10 V 2.0 k 100 H 0.1 F DUT 50 Output Pulse Generator 50 Input Sampling Oscilloscopes VR 0.1 F tr
tp 10%
t
IF trr t
IF
90% IR Input Signal IR(REC) = 1.0 mA Output Pulse (IF = IR = 10 mA; Measured at IR(REC) = 1.0 mA)
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
Figure 1. Recovery Time Equivalent Test Circuit
100 10
TA = 150C
IF, Forward Current (mA) (mA)
TA = 85C 10
IR , Reverse Current (A)
1.0
TA = 125C
TA = - 40C
0.1
TA = 85C
1.0
TA = 25C
TA = 55C
0.01
TA = 25C
0.1 0.2 0.4 0.6 0.8 VF, Forward Voltage (V) 1.0 1.2 0.001 0 10 20 30 VR, Reverse Voltage (V) 40 50
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
CD, Diode Capacitance (pF)
0.64
0.60
0.56
0.52
0
2
4 VR, Reverse Voltage (V)
6
8
Figure 4. Capacitance
MDS0302003A
Page 2


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